GaN material absorbs the light less than 365nm because it has a 3.4 eV energy bandgap (wavelength: ~365 nm).
Therefore, ultraviolet LEDs below 370 nm are generally manufactured in a vertical chip structure with the GaN epilayer and substrate removed.
- Soft-EPi provides UV LED with a flip chip/Lateral chip structure that minimizes light absorption by utilizing AlGaN templates with a high Al composition.
We launched the world's first 365 nm flip chip using our unique technology that can grow high-quality AlGaN epitaxial layer on PSS. - * GaN Based UV Epi: 380 ~ 410 nm
- - Epi Growth on Planar sapphire substrate / Patterned Sapphire Substrate (PSS)
- * AlGaN Based UV Epi: 340 ~ 380 nm
- - Epi Growth on Planar sapphire substrate / Patterned Sapphire Substrate (PSS)
