GaN Based RED Epi wafer

  • Substrate : Patterned Sapphire Basically, this technique is applicable to all substrates
    (sapphire, Si, SiC and GaN).
  • Wafer Size : 2 inch, 4 inch, 6 inch Normal Size : 4 inch
  • Wavelength : 620~670 nm Can be changed according to
    customer request

Wall Plug Efficiency over 1%

** Recently, we have achieved a WPE of over 2%. New data will be updated soon.

# Characteristic Curves

  • L-I-V Measurement @ room temp, Integrating sphere
  • LED chip size: 650㎛ x 650 ㎛ flip chip
  • Leakage current: 10~20 ㎂ @-5V