Patent

Patent

Country Division Application Number Title of the invention
Korea Registration 10-1389462 III-nitride semiconductor stacked structure
Korea Registration 10-1504731 III-nitride semiconductor stacked structure
Korea Registration 10-1504732 III-nitride semiconductor stacked structure
Korea Registration 10-1548610 III-nitride semiconductor stacked structure
Korea Registration 10-1607564 Method of growing III-nitride semiconductor layer
Korea Registration 10-1645574 Method of growing III-nitride semiconductor layer
Korea Registration 10-1692404 Semiconductor light emitting device for UV curing
Korea Registration 10-1654069 Fluorescent material detecting apparatus
Korea Registration 10-1803929 Light emitting device near-UV rays and III-nitride semiconductor template used the same
China Registration CN104838473B III-nitride semiconductor stacked structure
Korea Assignment 10-2018-0043387 Method of manufacturing a panel with light emitting devices
Korea Assignment 10-2018-0114140 Wafer for light emitting device and method of manufacturing a panel with the same
Korea Assignment 10-2018-0075177 Light emitting device emitting near-UV rays and III-nitride semiconductor template used for the same
Korea Assignment 10-2018-0114140 Wafer for light emitting device and method of manufacturing a panel with the same
USA Assignment 16/083,618 Light emitting device emitting near-UV rays and III-nitride semiconductor template used for the same
Korea Assignment 10-2018-0170271 Semiconductor light emitting device for UV curing
Korea Assignment 10-2018-0170273 Light emitting device emitting near-UV rays and III-nitride semiconductor template used for the same
USA Assignment 16/234,933 Light emitting device emitting near-UV rays and III-nitride semiconductor template used for the same
Korea Assignment 10-2019-0118466 Method of transferring light emitting portion
Korea Assignment 10-2019-0155415 Wafer for light emitting device
Korea Assignment 10-2020-0104644 Method of transferring light emitting portion
Korea Assignment 10-2021-0060792 Method of manufacturing a III-nitride semiconductor light emitting structure