| Korea |
Registration |
10-1389462 |
III-nitride semiconductor stacked structure |
| Korea |
Registration |
10-1504731 |
III-nitride semiconductor stacked structure |
| Korea |
Registration |
10-1504732 |
III-nitride semiconductor stacked structure |
| Korea |
Registration |
10-1548610 |
III-nitride semiconductor stacked structure |
| Korea |
Registration |
10-1607564 |
Method of growing III-nitride semiconductor layer |
| Korea |
Registration |
10-1645574 |
Method of growing III-nitride semiconductor layer |
| Korea |
Registration |
10-1692404 |
Semiconductor light emitting device for UV curing |
| Korea |
Registration |
10-1654069 |
Fluorescent material detecting apparatus |
| Korea |
Registration |
10-1803929 |
Light emitting device near-UV rays and III-nitride semiconductor template
used the same |
| China |
Registration |
CN104838473B |
III-nitride semiconductor stacked structure |
| Korea |
Assignment |
10-2018-0043387 |
Method of manufacturing a panel with light emitting devices |
| Korea |
Assignment |
10-2018-0114140 |
Wafer for light emitting device and method of manufacturing a panel with the
same |
| Korea |
Assignment |
10-2018-0075177 |
Light emitting device emitting near-UV rays and III-nitride semiconductor
template used for the same |
| USA |
Assignment |
16/083,618 |
Light emitting device emitting near-UV rays and III-nitride semiconductor
template used for the same |
| Korea |
Assignment |
10-2018-0170271 |
Semiconductor light emitting device for UV curing |
| Korea |
Assignment |
10-2018-0170273 |
Light emitting device emitting near-UV rays and III-nitride semiconductor
template used for the same |
| USA |
Assignment |
16/234,933 |
Light emitting device emitting near-UV rays and III-nitride semiconductor
template used for the same |
| Korea |
Assignment |
10-2019-0118466 |
Method of transferring light emitting portion |
| Korea |
Registration |
10-2262251 |
Wafer for light emitting device |
| Korea |
Assignment |
PCT/KR2019/004492 |
Method of manufacturing a panel with light emitting devices |
| Korea |
Assignment |
10-2020-0104644 |
Method of transferring light emitting portion |
| Korea |
Assignment |
10-2021-0060792 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
10-2021-0072816 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
10-2021-0072818 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
10-2021-0097233 |
Light emitting device and method for manufacturing the same |
| Korea |
Assignment |
10-2022-0058242 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Registration |
10-2510491 |
Method of trransferring light emitting portion |
| Korea |
Assignment |
PCT/KR2022/006780 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
10-2022-0084575 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
PCT/KR2022/010859 |
Method for manufactureing a III-nitride semiconductor light emitting device
|
| Korea |
Assignment |
10-2022-0140126 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
10-2022-0148639 |
Method of growing III-nitride semiconductor layer |
| Korea |
Assignment |
10-2023-0006266 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
10-2023-0031246 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
PCT/KR2023/006478 |
Group III-nitride semiconductor light emiiing device |
| Korea |
Assignment |
10-2023-0079787 |
Method of measuring a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
10-2023-0079793 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
10-2023-0079794 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
| Korea |
Assignment |
10-2023-0147470 |
Group III-nitride semiconductor light emitting device and method of emitting
red light using the same |
| Korea |
Assignment |
PCT/KR2023/016773 |
Group III-nitride semiconductor light emiiing device |
| USA |
Assignment |
18/290,056 |
Method of manufacturing a III-nitride semiconductor light emitting structure |
