Korea |
Registration |
10-1389462 |
III-nitride semiconductor stacked structure |
Korea |
Registration |
10-1504731 |
III-nitride semiconductor stacked structure |
Korea |
Registration |
10-1504732 |
III-nitride semiconductor stacked structure |
Korea |
Registration |
10-1548610 |
III-nitride semiconductor stacked structure |
Korea |
Registration |
10-1607564 |
Method of growing III-nitride semiconductor layer |
Korea |
Registration |
10-1645574 |
Method of growing III-nitride semiconductor layer |
Korea |
Registration |
10-1692404 |
Semiconductor light emitting device for UV curing |
Korea |
Registration |
10-1654069 |
Fluorescent material detecting apparatus |
Korea |
Registration |
10-1803929 |
Light emitting device near-UV rays and III-nitride semiconductor template used the same |
China |
Registration |
CN104838473B |
III-nitride semiconductor stacked structure |
Korea |
Assignment |
10-2018-0043387 |
Method of manufacturing a panel with light emitting devices |
Korea |
Assignment |
10-2018-0114140 |
Wafer for light emitting device and method of manufacturing a panel with the same |
Korea |
Assignment |
10-2018-0075177 |
Light emitting device emitting near-UV rays and III-nitride semiconductor template used for the same |
Korea |
Assignment |
10-2018-0114140 |
Wafer for light emitting device and method of manufacturing a panel with the same |
USA |
Assignment |
16/083,618 |
Light emitting device emitting near-UV rays and III-nitride semiconductor template used for the same |
Korea |
Assignment |
10-2018-0170271 |
Semiconductor light emitting device for UV curing |
Korea |
Assignment |
10-2018-0170273 |
Light emitting device emitting near-UV rays and III-nitride semiconductor template used for the same |
USA |
Assignment |
16/234,933 |
Light emitting device emitting near-UV rays and III-nitride semiconductor template used for the same |
Korea |
Assignment |
10-2019-0118466 |
Method of transferring light emitting portion |
Korea |
Assignment |
10-2019-0155415 |
Wafer for light emitting device |
Korea |
Assignment |
10-2020-0104644 |
Method of transferring light emitting portion |
Korea |
Assignment |
10-2021-0060792 |
Method of manufacturing a III-nitride semiconductor light emitting structure |