Domestic Patent

• 1. Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate
  • Appl. Phys. Lett. 95 , 071101 (2009)
• 2. Ohmic contact properties of nonpolar a-plane GaN films on r-plane sapphire substrates
  • J. Phys. D: Appl. Phys. 42, 245101 (2009)
• 3. Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electro absorption and carrier dynamics behavior
  • Photonics Global Conference (PGC), (2010)
• 4. Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane (11-20) GaN Light
  • Emitting Diodes on Sapphire Substrate
  • Photonics Technology Letters. 22, 595 (2010)
• 5. Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique
  • Nanotechnology 21, 134026 (2010)
• 6. Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching
  • Optics Express, Vol. 18, Issue 9, pp.9728-9732 (2010)
• 7. Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two stage growth process
  • J. Appl. Phys. 110, 093709 (2011)
• 8. Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates
  • J. Appl. Phys. 109, 043103 (2011)
• 9. Etched Surface Morphology of Heteroepitaxial Nonpolar (11-20) and Semipolar (11-22) GaN Films by Photo enhanced Chemical Wet Etching
  • J. Electrochem. Soc. volume 158, issue 4, D196-D199 (2011)
• 10. Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates
  • Optics Express, Vol. 19, Issue 14, 12919 (2011)
• 11. Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a–plane n-type GaN
  • AIP Conf. Proc. 1399 , 153 (2011)
• 12. Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures
  • J. Appl. Phys. 111 , 033103 (2012)
• 13. Effect of r-plane (1–102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11–20) GaN
  • Journal of the Korean Physical Society May, Volume 60, Issue 10, pp 1649-1655 (2012)
• 14. Thermal degradation of Ohmic contacts on semipolar (11–22) GaN films grown on m-plane (1–100) sapphire substrates
  • Journal of the Korean Physical Society October, Volume 61, Issue 7, pp.1060-1064 (2012)
• 15. High brightness nonpolar a-plane (11–20) GaN light-emitting diodes
  • Semicond. Sci. Technol. 27, 024017 (2012)
• 16. Analysis of the modified williamson-hall plot of non-polar a-plane GaN films
  • Journal of the Korean Physical Society Volume 62, Issue 4, pp.601-605 (2013)
• 17. Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r-sapphire substrates
  • J. Appl. Phys. 113 , 023506 (2013)
• 18. Highly stable blue-emission in semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode
  • Appl. Phys. Lett. 103 , 021111 (2013)
• 19. Investigation of carrier transport properties in semipolar (11-22) GaN films with low defect density
  • Appl. Phys. Lett. 103 , 162103 (2013)
• 20. Structural and electrical anisotropies of Si-doped a-plane (11–20) GaN films with different SiNx interlayers
  • Semicond. Sci. Technol. 28 085007 (2013)
• 21. Influence of Growth Parameters on Structural Anisotropy of Epitaxial a‐plane GaN Films
  • Appl. Phys. Lett. 103 , 162103 (2013)