Overview
- â–¶ Dislocation Density: 0.5 ~ 9 x 107 cm-2
- â–¶ Stacking Fault Density: 0.5 ~ 9 x 104 cm-1
- ▶ Thickness: minimum 4μm, maximum 15 μm
- â–¶ Piezo-Electric field: less than 20%
(comparison with c-plane Blue QW)
- â–¶ Excellent PL, CL Properties
- â–¶ Mirror Like Flat Surface
- ▶ Wafer Bowing: 40~60 μm
(@2 inch, 8μm GaN thickness)
- â–¶ Uniformity Warranted
|
Commercialized C-plane GaN on sapphire sub. |
Soft-Epi semi-polar GaN on sapphire sub. |
| piezo-electric field |
large |
small |
| polarized beam |
none |
exist |
| QW thickness |
thin |
relatively thick |
| patterned sapphire sub.(@ lateral type) |
necessary |
unnecessary |
| chemical lift off(@vertical type) |
impossible |
possible |
| micro crack(@laser lift off) |
exist |
almost do not exist |
| manufacturing cost |
|
relatively inexpensive |
| efficiency droop |
exist |
probably, relatively free |
Application Area : LED, Laser Diode, Solar Cell, Power Electronics, etc.
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