Technology

Overview

Product Descriptions

  • ▶ Dislocation Density: 0.5 ~ 9 x 107 cm-2
  • ▶ Stacking Fault Density: 0.5 ~ 9 x 104 cm-1
  • ▶ Thickness: minimum 4μm, maximum 15 μm
  • ▶ Piezo-Electric field: less than 20%
         (comparison with c-plane Blue QW)
  • ▶ Excellent PL, CL Properties
  • ▶ Mirror Like Flat Surface
  • ▶ Wafer Bowing: 40~60 μm
         (@2 inch, 8μm GaN thickness)
  • ▶ Uniformity Warranted
Commercialized C-plane GaN on sapphire sub. Soft-Epi semi-polar GaN on sapphire sub.
piezo-electric field large small
polarized beam none exist
QW thickness thin relatively thick
patterned sapphire sub.(@ lateral type) necessary unnecessary
chemical lift off(@vertical type) impossible possible
micro crack(@laser lift off) exist almost do not exist
manufacturing cost relatively inexpensive
efficiency droop exist probably, relatively free
Application Area : LED, Laser Diode, Solar Cell, Power Electronics, etc.
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