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Overview

옄쇅꽑

옄쇅꽑씠?

옄쇅꽑 UV(ultraviolet rays)씪怨좊룄 븯硫 븳옄濡쒕뒗 옄쇅꽑(榮ュ쨼渶)씠떎. 媛떆愿묒꽑쓽 뙆옣(400nm)蹂대떎뒗 吏㏐퀬 X꽑(100nm)蹂대떎뒗 湲 뙆옣쓣 媛吏 쟾옄湲고뙆瑜 留먰븳떎. 깭뼇愿묒꽑 媛먮쭏꽑, 뿊뒪꽑, 옄쇅꽑, 媛떆愿묒꽑, 쟻쇅꽑, 씪뵒삤뙆 벑쑝濡 援ъ꽦릺뼱 엳쑝硫, 씠뒗 뙆옣뿉 뵲씪 媛곴컖 援щ퀎븳떎. 옄쇅꽑 3쁺뿭쑝濡 굹닃 닔 엳쑝硫, 媛 듅꽦뿉 뵲씪 떎깮솢뿉 留롮씠 솢슜릺怨 엳떎. 옄쇅꽑쓽 뙆옣 떎쓬怨 媛숈씠 遺꾨쪟맂떎.

옄쇅꽑쓽 遺꾨쪟

씠由 빟뼱 뙆옣 (nm) 뿉꼫吏 (eV)
Ultraviolet A (long wave, or black wave) UVA 315mn - 400nm 3.10 - 3.94eV
Ultraviolet B (medium wave) UVB 280nm - 315nm 3.94 - 4.43eV
Ultraviolet C(short wave, or germicidal) UVC 200nm - 280nm 4.43 - 12.4eV
Vacuum Ultraviolet VUV 100nm - 200nm 6.20 - 124eV

UV-A(UVA 315-400nm)(꽟쑀궛뾽, 怨좉퀬븰, 吏吏덊븰쟻 븫諛섑깘궗, 踰붿즲닔궗, 쐞룓媛먮퀎(떇), 듅닔議곕챸) Black Light씪怨좊룄븯硫 떎궡뿉꽌 깭떇쓣 븯嫄곕굹 뫖瑜 議곕챸쓣 븷 븣 궗슜맂떎. 삉븳 TiO2 벑쓽 愿묒큺留ㅺ 솢꽦솕맆 닔 엳뒗 뿉꼫吏썝쑝濡 궗슜븷 닔 엳뼱 理쒓렐뿉뒗 愿묒큺留ㅻ 씠슜븳 닔泥섎━, 湲곗쿂由ъ뿉 궗슜릺怨 엳떎.

UV-BB (UVB 280-315nm) (誘몄슜뜫뀗, 愿묓솕븰쟻 泥섎━, 뵾遺蹂묒튂猷, 湲곗긽븰쟻 寃궗옣鍮, 쓽猷뚯슜) Dorno꽑씠씪怨 遺瑜대ʼn 鍮꾪誘 D瑜 삎꽦븯嫄곕굹 뵾遺뿉 솉諛섏옉슜쓣 씪쑝궓떎.

UV-C(UVC 100-280nm) (媛곸쥌 궡洹(臾, 怨듦린, 닔쁺옣, 怨듭“떎, 湲고), 깉痍) 궡洹(Germicidal)꽑씠씪怨 븯硫 DNA 떒諛깆쭏 洹몃━怨 삤議(Ozone)씠 옒 씉닔븯뒗 뙆옣씠떎. 뵲씪꽌 삤議댁쓣 옒 遺꾪빐븯湲 븣臾몄뿉 理쒓렐뿉뒗 UV/OZONE AOP怨듭젙뿉 쓳슜릺嫄곕굹 삤議댄뙆愿댁슜 洹몃━怨 냼룆슜쑝濡 궗슜릺怨 엳떎.

UV-LED Technology

옄쇅꽑쓽 쓳슜

옄쇅꽑 삤議댁깮꽦, 궡洹, 愿묓솕븰 옉슜 벑 뙆옣뿉 뵲씪 떎뼇븳 湲곕뒫씠 엳떎. 뵲씪꽌 媛곴컖 쑀슚븳 뙆옣뿭 옄쇅꽑쓣 슚쑉쟻쑝濡 諛곗텧븯뒗 씤怨듦킅썝뿉 쓽빐 꼻寃 媛 諛⑸㈃뿉꽌 쓳슜릺怨 엳떎.

LED

1. LED 젣옉 怨듭젙

(A) 뿉뵾썾씠띁 젣옉
MOCVD 옣鍮꾨 씠슜븯뿬, 湲고뙋(궗뙆씠뼱, SiC 벑) 쐞뿉 솕빀臾 諛섎룄泥대 꽦옣떆耳 뿉뵾썾씠띁瑜 젣議고븯뒗 怨듭젙

(B) Chip 怨듭젙
뿉뵾썾씠띁뿉 p, n 쟾洹뱀쓣 삎꽦븯怨 Chip Size 蹂꾨줈 젅떒/媛怨듯븯뒗 怨듭젙 愿묒텛異쒗슚쑉쓣 洹밸솕븳 怨좏쐶룄 移 깮궛

(C) Package 怨듭젙
- 媛 쓳슜遺꾩빞쓽 Package 삎긽뿉 Chip, 쟾洹밴낵 Wire瑜 뿰寃고븯怨, 議곕┰ 썑 닔吏濡 諛遊됲븯뒗 怨듭젙
- 怨좎텧젰, 怨좊갑뿴 뙣궎吏뺤쓣 쐞븳 諛⑹뿴, 愿묓븰꽕怨꾧 븘슂븯떎.

(D) 媛 쓳슜젣뭹뿉 理쒖쟻솕맂 떆뒪뀥 젣옉

2. LED 愿묒썝쓽 듅꽦

1. 寃쎌젣꽦
- 쑀吏鍮꾩슜 젅媛 : 닔紐낆씠 留ㅼ슦 湲멸린 븣臾몄뿉 옩봽 援먯껜二쇨린媛 湲몄뼱吏꾨떎.
- 뿉꼫吏슚쑉 利앷 : 닔옩봽뿉 鍮꾪빐 썾뵮 뿉꼫吏슚쑉씠 利앷븯뿬 쟾湲곕즺 嫄깆젙씠 뾾떎.
- 뙆옣꽑깮 媛뒫 : 닔옩봽 떖由 슜룄뿉 留욊쾶 븘슂븳 뙆옣쓣 꽑깮븷 닔 엳쑝誘濡 遺덊븘슂븳 뿉꼫吏 諛⑹텧쓣 留됱븘 뿉꼫吏슚쑉씠 넂怨 諛쒖뿴씠 릺吏 븡뒗떎.

2. 솚寃쎌튇솕쟻
- 닔씠 룷븿릺吏 븡븘 룓湲곕Ъ뿉 쓽븳 삤뿼씠 뾾떎.
- 삤議댁씠 諛쒖깮븯吏 븡뒗떎.
- 뿉꼫吏瑜 젅빟븷 닔 엳떎.

3. 궗슜렪由ъ꽦
- 諛쒖뿴씠 쟻뼱 뿴뿉 誘쇨컧븳 옱猷뚯뿉룄 궗슜븷 닔 엳떎.
- 궗슜떆 쟻빀븳 뙆옣쓽 愿묒텧젰씠 留ㅼ슦 媛뺥븯誘濡 鍮좊Ⅸ 옉뾽씠 媛뒫븯떎.
- 삁뿴떆媛꾩씠 븘슂븯吏 븡븘 옣鍮꾨 耳ш낵 룞떆뿉 궗슜媛뒫븯떎.
- 옉怨 媛踰쇱썙 쑕媛 媛꾪렪븯떎.
- 媛뺣룄議곗젅씠 媛뒫븯떎.

Solutions
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